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STGF15M65DF2 Datasheet(PDF) 3 Page - STMicroelectronics |
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STGF15M65DF2 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 15 page STGF15M65DF2 Electrical ratings DocID028488 Rev 1 3/15 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0 V) 650 V IC(1) Continuous collector current at TC = 25 °C 30 A Continuous collector current at TC = 100 °C 15 ICP(2) Pulsed collector current 60 A VGE Gate-emitter voltage ±20 V IF(1) Continuous forward current at TC = 25 °C 30 A Continuous forward current at TC = 100 °C 15 IFP(2) Pulsed forward current 60 A VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) 2.5 kV PTOT Total dissipation at TC = 25 °C 31 W TSTG Storage temperature range - 55 to 150 °C TJ Operating junction temperature - 55 to 175 °C Notes: (1)Limited by maximum junction temperature. (2)Pulse width limited by maximum junction temperature. Table 3: Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case IGBT 4.8 °C/W RthJC Thermal resistance junction-case diode 6.25 RthJA Thermal resistance junction-ambient 62.5 |
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