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IRF60B217 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IRF60B217 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 10 page IR MOSFET StrongIRFET™ IRF60B217 HEXFET ® Power MOSFET D S G Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free* RoHS Compliant, Halogen-Free VDSS 60V RDS(on) typ. 7.3m max 9.0m ID 60A Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature TO-220AB IRF60B217 S D G G D S Gate Drain Source Base part number Package Type Standard Pack Form Quantity IRF60B217 TO-220 Tube 50 IRF60B217 Orderable Part Number 25 50 75 100 125 150 175 TC , CaseTemperature (°C) 0 10 20 30 40 50 60 4 8 12 16 20 VGS, Gate-to-Source Voltage (V) 0 5 10 15 20 25 30 TJ = 25°C TJ = 125°C ID = 36A 1 2016– 01-05 |
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