MCR8SD datasheet(3/5 Pages) KERSEMI

Part #	MCR8SD

Description	Silicon Controlled Rectifiers

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Manufacturer	KERSEMI [Kersemi Electronic Co., Ltd.]

Direct Link	http://www.kersemi.com

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3 / 5 page

MCR8SD, MCR8SM, MCR8SN

3

+ Current

+ Voltage

VTM

IDRM at VDRM

IH

Symbol

Parameter

VDRM

Peak Repetitive Off State Forward Voltage

IDRM

Peak Forward Blocking Current

VRRM

Peak Repetitive Off State Reverse Voltage

IRRM

Peak Reverse Blocking Current

VTM

Peak On State Voltage

IH

Holding Current

Voltage Current Characteristic of SCR

Anode +

on state

Reverse Blocking Region

(off state)

Reverse Avalanche Region

Anode –

Forward Blocking Region

IRRM at VRRM

(off state)

180

°

120

°

120

°

90

°

Figure 1. Typical RMS Current Derating

Figure 2. On–State Power Dissipation

Figure 3. Typical On–State Characteristics

Figure 4. Typical Gate Trigger Current versus

Junction Temperature

8

0

IT(RMS), RMS ON–STATE CURRENT (AMPS)

110

IT(AV), AVERAGE ON–STATE CURRENT (AMPS)

38

0

3

0

3.5

0.5

VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)

100

10

1

0.1

TJ, JUNCTION TEMPERATURE (°C)

–10

–40

100

10

0

2.5

105

95

12

3

1

2

6

15

1.0

2.0

20

50

80

110

dc

90

°

60

°

dc

30

°

TYPICAL @ TJ = 25°C

MAXIMUM @ TJ = 110°C

5

1.5

45

80

4

75

85

67

9

67

30

°

12

535

65

95

–25

20

30

40

50

60

70

80

90

180

°

60

°

3.0

MAXIMUM @ TJ = 25°C

90

100

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MCR8SD Datasheet(PDF) 3 Page - Kersemi Electronic Co., Ltd.

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