1

MCR8SD, MCR8SM,

MCR8SN

Preferred Device

Sensitive Gate

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed primarily for half-wave ac control applications, such as

motor controls, heating controls, and power supplies; or wherever

half–wave, silicon gate–controlled devices are needed.

Logic Circuits

Ease of Design

Rating

Symbol

Value

Unit

Peak Repetitive Off–State Voltage(1)

(TJ = –40 to 110°C, Sine Wave,

50 to 60 Hz, Gate Open)

MCR8SD

MCR8SM

MCR8SN

VDRM,

VRRM

400

600

800

Volts

On-State RMS Current

(180

° Conduction Angles; TC = 80°C)

IT(RMS)

8.0

Amps

Peak Non-Repetitive Surge Current

(1/2 Cycle, Sine Wave, 60 Hz,

TJ = 110°C)

ITSM

80

Amps

Circuit Fusing Consideration

(t = 8.33 ms)

I2t

26.5

A2sec

Forward Peak Gate Power

(Pulse Width

≤ 1.0 µs, TC = 80°C)

PGM

5.0

Watts

Forward Average Gate Power

(t = 8.3 ms, TC = 80°C)

PG(AV)

0.5

Watt

Forward Peak Gate Current

(Pulse Width

≤ 1.0 µs, TC = 80°C)

IGM

2.0

Amps

Operating Junction Temperature Range

TJ

– 40 to 110

°C

Storage Temperature Range

Tstg

– 40 to 150

°C

(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings

apply for zero or negative gate voltage; positive gate voltage shall not be

applied concurrent with negative potential on the anode. Blocking voltages

shall not be tested with a constant current source such that the voltage

ratings of the devices are exceeded.

SCRs

8 AMPERES RMS

400 thru 800 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

Device

Package

Shipping

ORDERING INFORMATION

MCR8SD

TO220AB

50 Units/Rail

MCR8SM

TO220AB

MCR8SN

TO220AB

www.kersemi.com

50 Units/Rail

50 Units/Rail

K

G

A

TO–220AB

CASE 221A

STYLE 3

1

2

3

4

PIN ASSIGNMENT

1

2

3

Anode

Gate

Cathode

4

Anode