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TYN810 Datasheet(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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TYN810 Datasheet(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
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2 / 4 page  TYN210 ---> TYN1010 2/4 Symbol Parameter Value Unit Rth (j-a) Junction to ambient 60 °C/W Rth (j-c) DC Junction to case for DC 2.5 °C/W GATE CHARACTERISTICS (maximum values) PG(AV) =1W PGM = 10W (tp = 20µs) IFGM = 4A (tp = 20µs) VRGM =5V THERMAL RESISTANCE Symbol Test conditions Value Unit IGT VD = 12V (DC) RL =33 Ω Tj = 25°C MAX. 15 mA VGT VD = 12V (DC) RL =33 Ω Tj = 25°C MAX. 1.5 V VGD VD =VDRM RL = 3.3k Ω Tj =110°C MIN. 0.2 V tgt VD =VDRM IG = 40mA dIG/dt = 0.5A/µs Tj = 25°C TYP. 2 µs IL IG = 1.2IGT Tj = 25°C TYP. 50 mA IH IT = 100mA Gate open Tj = 25°C MAX. 30 mA VTM ITM = 20A tp = 380µs Tj = 25°C MAX. 1.6 V IDRM IRRM VDRM rated VRRM rated Tj = 25°C MAX. 0.01 mA Tj = 110°C MAX. 2 dV/dt Linear slope up to VD = 67% VDRM gate open Tj = 110°C MIN. 200 V/ µs tq VD=67%VDRM ITM= 20A VR= 25V dITM/dt=30 A/ µsdVD/dt= 50V/µs Tj = 110°C TYP. 70 µs ELECTRICAL CHARACTERISTICS 012 3456789 0 2 4 6 8 10 12 P(W) 360 O =180 o =120 o =90 o =60 o =30 o DC I(A) T(AV) Fig. 1: Maximum average power dissipation ver- sus average on-state current. 0 20 406080 100 120 140 0 2 4 6 8 10 12 -115 -105 -120 -110 -100 -125 P (W) Tcase ( C) o = 180 o Tamb ( C) o Rth = 0 C/W 2C/W 4C/W 6C/W o o o o Fig. 2: Correlation between maximum average power dissipation and maximum allowable temper- atures (Tamb and Tcase) for different thermal resistances heatsink + contact. www.kersemi.com Ｉｎｆｏｒｍａｔｉｏｎ ｏｆｆｅｒｓ：ｈｔｔｐ：／／ｗｗｗ．ｋｋｇ．ｃｏｍ．ｃｎ |
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