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SBH52444N-FSAN Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # SBH52444N-FSAN
Description  High Power BIDI Optical Standard Module 1310 nm Emitting, 1550 nm Receiving
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SBH52444N-FSAN Datasheet(HTML) 7 Page - Infineon Technologies AG

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SBH52444x-FSAN
Technical Data
Data Sheet
7
2002-05-28
The electro-optical characteristics described in the following tables are only valid for use
within the specified maximum ratings or under the recommended operating conditions.
Transmitter Electro-Optical Characteristics
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
Optical output power
(maximum)
P
F, max
2mW
Emission wavelength center of
range,
P
F = 0.5 PF, max.
l
trans
1260
1360
nm
Spectral width (RMS)
sl
5.8
Temperature coefficient of
wavelength
TC
0.5
nm/K
Threshold current
(whole temperature range)
I
th
245
mA
Forward voltage,
P
F = 0.5 PF, max.
V
F
1.5
V
Radiant power at
I
th
P
th
50
µW
Slope efficiency (–40...85°C)
h
35
150
mW/A
Variation of 1st derivative of P/I
(0.1 to 2.0 mW)
S
var
–30
30
%
Differential series resistance
R
S
8
W
Rise time (10%–90%)
t
r
100
200
ps
Fall time (10%–90%)
t
f
270
500
Monitor Diode Electro-Optical Characteristics
Parameter
Symbol
Limit Values
Unit
min.
max.
Dark current,
V
R = 5 V, PF = 0, T = Tmax
I
R
500
nA
Photocurrent,
V
R = 5 V, PF = 0.5 PF, max
I
P
100
1000
µA
Capacitance,
V
R = 5 V, f = 1 MHz
C
5
10
pF
Tracking error
1),
V
R = 5 V
1)
The tracking error TE is the maximum deviation of
P
F at constant current Imon over a specified temperature
range and relative to the reference point:
I
mon, ref = Imon (T = 25°C, PF = 0.5 PF, max.). Thus, TE is given by:
TE
–11
dB
TE dB
[]
10
P
F TC
[]
P
F 25°C
[]
-------------------------
log
™
=


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