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SBH52444N-FSAN Datasheet(PDF) 7 Page - Infineon Technologies AG |
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SBH52444N-FSAN Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 13 page SBH52444x-FSAN Technical Data Data Sheet 7 2002-05-28 The electro-optical characteristics described in the following tables are only valid for use within the specified maximum ratings or under the recommended operating conditions. Transmitter Electro-Optical Characteristics Parameter Symbol Limit Values Unit min. typ. max. Optical output power (maximum) P F, max 2mW Emission wavelength center of range, P F = 0.5 PF, max. l trans 1260 1360 nm Spectral width (RMS) sl 5.8 Temperature coefficient of wavelength TC 0.5 nm/K Threshold current (whole temperature range) I th 245 mA Forward voltage, P F = 0.5 PF, max. V F 1.5 V Radiant power at I th P th 50 µW Slope efficiency (–40...85°C) h 35 150 mW/A Variation of 1st derivative of P/I (0.1 to 2.0 mW) S var –30 30 % Differential series resistance R S 8 W Rise time (10%–90%) t r 100 200 ps Fall time (10%–90%) t f 270 500 Monitor Diode Electro-Optical Characteristics Parameter Symbol Limit Values Unit min. max. Dark current, V R = 5 V, PF = 0, T = Tmax I R 500 nA Photocurrent, V R = 5 V, PF = 0.5 PF, max I P 100 1000 µA Capacitance, V R = 5 V, f = 1 MHz C 5 10 pF Tracking error 1), V R = 5 V 1) The tracking error TE is the maximum deviation of P F at constant current Imon over a specified temperature range and relative to the reference point: I mon, ref = Imon (T = 25°C, PF = 0.5 PF, max.). Thus, TE is given by: TE –11 dB TE dB [] 10 P F TC [] P F 25°C [] ------------------------- log = |
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