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AO3406 Datasheet(PDF) 1 Page - Kersemi Electronic Co., Ltd.

Part # AO3406
Description  N-Channel Enhancement Mode Field Effect Transistor
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Manufacturer  KERSEMI [Kersemi Electronic Co., Ltd.]
Direct Link  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

AO3406 Datasheet(HTML) 1 Page - Kersemi Electronic Co., Ltd.

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background image
Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol
Typ
Max
70
90
100
125
RθJL
63
80
Junction and Storage Temperature Range
A
PD
°C
1.4
0.9
-55 to 150
TA=70°C
ID
3.6
2.9
15
Pulsed Drain Current
B
Power Dissipation
A
TA=25°C
Continuous Drain
Current
A
Maximum
Units
Parameter
TA=25°C
TA=70°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V
±20
Gate-Source Voltage
Drain-Source Voltage
30
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t ≤ 10s
RθJA
N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = 30V
ID = 3.6A (VGS = 10V)
RDS(ON) < 65mΩ (VGS = 10V)
RDS(ON) < 105mΩ (VGS = 4.5V)
General Description
The AO3406 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO3406 is Pb-free
(meets ROHS & Sony 259 specifications). AO3406L
is a Green Product ordering option. AO3406 and
AO3406L are electrically identical.
G
D
S
TO-236
(SOT-23)
AO3406
Top View
G
S
D
2014-5-27
1
www.kersemi.com


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