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CMPA2560025D Datasheet(PDF) 1 Page - Cree, Inc |
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CMPA2560025D Datasheet(HTML) 1 Page - Cree, Inc |
1 / 9 page 1 Subject to change without notice. www.cree.com/rf CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. PN: CMPA2560025D Typical Performance Over 2.5-6.0 GHz (T C = 25˚C) Parameter 2.5 GHz 4.0 GHz 6.0 GHz Units Gain 27.5 24.3 23.1 dB Saturated Output Power, P SAT 1 35.8 37.5 25.6 W Power Gain @ P OUT = 43 dBm 23.1 20.9 16.3 dB PAE @ P OUT 43 dBm 31.5 32.8 30.7 % Note1: P SAT is defined as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA. Features • 24 dB Small Signal Gain • 25 W Typical P SAT • Operation up to 28 V • High Breakdown Voltage • High Temperature Operation • Size 0.180 x 0.145 x 0.004 inches Applications • Ultra Broadband Amplifiers • Fiber Drivers • Test Instrumentation • EMC Amplifier Drivers |
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