1

Subject to change without notice.

www.cree.com/rf

CMPA2560025D

25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier

Cree’s CMP2560025D is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit

(MMIC). GaN has superior properties compared to silicon or gallium

arsenide, including higher breakdown voltage, higher saturated

electron drift velocity and higher thermal conductivity. GaN HEMTs

also offer greater power density and wider bandwidths compared to

Si and GaAs transistors. This MMIC contains a two-stage reactively

matched amplifier design approach enabling very wide bandwidths to

be achieved.

PN: CMPA2560025D

Parameter

2.5 GHz

4.0 GHz

6.0 GHz

Units

Gain

27.5

24.3

23.1

dB

Saturated Output Power, P

SAT

1

35.8

37.5

25.6

W

Power Gain @ P

23.1

20.9

16.3

dB

PAE @ P

31.5

32.8

30.7

%

Features

SAT

Applications