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CMPA2560025F-AMP Datasheet(PDF) 2 Page - Cree, Inc |
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CMPA2560025F-AMP Datasheet(HTML) 2 Page - Cree, Inc |
2 / 11 page 2 CMPA2560025F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. Absolute Maximum Ratings (not simultaneous) at 25˚C Parameter Symbol Rating Units Drain-source Voltage V DSS 84 VDC Gate-source Voltage V GS -10, +2 VDC Storage Temperature T STG -65, +150 ˚C Operating Junction Temperature T J 225 ˚C Forward Gate Current I G 13 mA Screw Torque T 40 in-oz Thermal Resistance, Junction to Case R θ JC 2.5 ˚C/W Electrical Characteristics (Frequency = 2.5 GHz to 6.0 GHz unless otherwise stated; T C = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics Gate Threshold Voltage V (GS)TH -3.8 -3.0 -2.3 V V DS = 10 V, ID = 20 mA Gate Quiescent Voltage V (GS)Q – -2.7 – VDC V DD = 28 V, ID = 1200 mA Drain-Source Breakdown Voltage V BD 84 100 – V V GS = -8 V, ID = 20 mA Saturated Drain Current1 I DC 8.0 9.7 – A V DS = 6.0 V, VGS = 2.0 V RF Characteristics2 Small Signal Gain S21 19.5 24 – dB V DD = 28 V, ID = 1200 mA Input Return Loss S11 – -8 -5 dB V DD = 28 V, ID = 1200 mA Output Return Loss S22 – -8 -3 dB V DD = 28 V, ID = 1200 mA Power Output 1 P OUT 22.0 30 – W V DD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 4.0 GHz Power Output 2 P OUT 12.5 17 – W V DD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 5.0 GHz Power Output 3 P OUT 15.5 20 – W V DD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 6.0 GHz Power Added Efficiency 1 PAE 34 40 – % V DD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 4.0 GHz Power Added Efficiency 2 PAE 20 26 – % V DD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 5.0 GHz Power Added Efficiency 3 PAE 24 30 – % V DD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 6.0 GHz Power Gain 1 G P 17.5 18.8 – dB V DD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 4.0 GHz Power Gain 2 G P 15.0 16.3 – dB V DD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 5.0 GHz Power Gain 3 G P 16.0 17.0 – dB V DD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 6.0 GHz Output Mismatch Stress VSWR – – 5 : 1 Y No damage at all phase angles, V DD = 28 V, IDQ = 1200 mA, PIN = 26 dBm Notes: 1 Scaled from PCM data. 2 All data CW tested in CMPA2560025F-AMP. |
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