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SPD04N60C2 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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SPD04N60C2 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 11 page 2002-10-07 Page 3 SPD04N60C2 SPU04N60C2 Final data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=2.8A - 2.5 S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 580 - pF Output capacitance Coss - 220 - Reverse transfer capacitance Crss - 7 - Effective output capacitance, 1) energy related Co(er) VGS=0V, VDS=0V to 480V - 20 - pF Effective output capacitance, 2) time related Co(tr) - 35 - Turn-on delay time td(on) VDD=380V, VGS=0/13V, ID=4.5A, RG=18Ω, Tj=125°C - 10 - ns Rise time tr - 31 - Turn-off delay time td(off) - 44 66 Fall time tf - 12.5 18.8 Gate Charge Characteristics Gate to source charge Qgs VDD=350V, ID=4.5A - 4.5 - nC Gate to drain charge Qgd - 11 - Gate charge total Qg VDD=350V, ID=4.5A, VGS=0 to 10V - 17.6 22.9 Gate plateau voltage V(plateau) VDD=350V, ID=4.5A - 8 - V 1C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 2C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. |
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