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SPD11N10 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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SPD11N10 Datasheet(HTML) 3 Page - Infineon Technologies AG |
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3 / 8 page  2002-01-31 Page 3 SPD11N10 SPU11N10 Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS2*ID*RDS(on)max , ID=7.8A 2.6 5.8 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 320 400 pF Output capacitance Coss - 72 90 Reverse transfer capacitance Crss - 43 54 Turn-on delay time td(on) VDD=50V, VGS=10V, ID=10.5A, RG=28 - 8.2 10 ns Rise time tr - 46 58 Turn-off delay time td(off) - 29 36 Fall time tf - 23 29 Gate Charge Characteristics Gate to source charge Qgs VDD=80V, ID=10.5A - 2.3 2.9 nC Gate to drain charge Qgd - 7.8 9.8 Gate charge total Qg VDD=80V, ID=10.5A, VGS=0 to 10V - 14.6 18.3 Gate plateau voltage V(plateau) VDD=80V, ID=10.5A - 6.4 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 10.5 A Inverse diode direct current, pulsed ISM - - 41.2 Inverse diode forward voltage VSD VGS=0V, IF=10.5A - 0.93 1.25 V Reverse recovery time trr VR=50V, IF=lS, diF/dt=100A/µs - 57 71 ns Reverse recovery charge Qrr - 134 167 nC |
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Similar Description - SPD11N10 |
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