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SPD30N03S2L-10 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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SPD30N03S2L-10 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 8 page 2003-04-24 Page 3 SPD30N03S2L-10 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=30A 23.8 47.5 - S Input capacitance Ciss VGS=0V, VDS =25V, f=1MHz - 1160 1550 pF Output capacitance Coss - 450 600 Reverse transfer capacitance Crss - 120 175 Turn-on delay time td(on) VDD=15V, VGS =10V, ID=30A, RG=5.4Ω - 6.1 9.2 ns Rise time tr - 13 20 Turn-off delay time td(off) - 27 41 Fall time tf - 17 26 Gate Charge Characteristics Gate to source charge Qgs VDD=24V, ID=30A - 3.7 4.9 nC Gate to drain charge Qgd - 10.9 16.3 Gate charge total Qg VDD=24V, ID=30A, VGS=0 to 10V - 31.4 41.8 Gate plateau voltage V(plateau) VDD=24V, ID=30A - 3.4 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 30 A Inv. diode direct current, pulsed ISM - - 120 Inverse diode forward voltage VSD VGS=0V, IF=30A - 0.9 1.2 V Reverse recovery time trr VR=-V, IF=lS, diF/dt=100A/µs - 31 39 ns Reverse recovery charge Qrr - 29 37 nC |
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