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SPD30N03S2L-20 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SPD30N03S2L-20 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 8 page 2003-04-24 Page 1 SPD30N03S2L-20 OptiMOS® Power-Transistor Product Summary VDS 30 V RDS(on) 20 m Ω ID 30 A Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated P- TO252 -3-11 Marking 2N03L20 Type Package Ordering Code SPD30N03S2L-20 P- TO252 -3-11 Q67042-S4077 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current1) TC=25°C ID 30 30 A Pulsed drain current TC=25°C ID puls 120 Avalanche energy, single pulse ID=30 A , VDD=25V, RGS=25Ω EAS 70 mJ Repetitive avalanche energy, limited by Tjmax2) EAR 6 Reverse diode dv/dt IS=30A, VDS=-V, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 60 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56 |
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