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SPD35N10 Datasheet(PDF) 6 Page - Infineon Technologies AG |
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SPD35N10 Datasheet(HTML) 6 Page - Infineon Technologies AG |
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6 / 8 page  2002-01-30 Page 6 Preliminary data SPD35N10 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 26.4 A, VGS = 10 V -60 -20 20 60 100 140 °C 200 Tj 0 20 40 60 80 100 120 140 160 m 190 SPD35N10 typ 98% 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS -65 -35 -5 25 55 85 115 °C 175 Tj 1.5 2 2.5 3 V 4 ID=1mA ID=83µA 11 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 5 10 15 20 25 V 35 VDS 1 10 2 10 3 10 4 10 pF Ciss Coss Crss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD 0 10 1 10 2 10 3 10 A SPD35N10 T j = 25 °C typ T j = 25 °C (98%) T j = 175 °C typ T j = 175 °C (98%) |
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