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SPD100N03S2L-04 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SPD100N03S2L-04 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 8 page 2003-05-09 Page 1 SPD100N03S2L-04 OptiMOS® Power-Transistor Product Summary V DS 30 V RDS(on) 4.2 m Ω I D 100 A Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated P-TO252-5-1 Titel: C:\ARJ\VPT09161.EPS Erstellt von: 1) Gate pin 1 Drain pin 3,6 Source pin 4,5 n.c.: pin 2 Marking PN03L04 Type Package Ordering Code SPD100N03S2L-04 P-TO252-5-1 Q67042-S4128 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current2) TC=100°C ID 100 100 A Pulsed drain current TC=25°C ID puls 400 Avalanche energy, single pulse ID=80A, VDD=25V, RGS=25Ω EAS 325 mJ Repetitive avalanche energy, limited by Tjmax3) EAR 15 Reverse diode dv/dt IS=100A, VDS=24V, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 150 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56 |
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