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SPB04N50C3 Datasheet(PDF) 4 Page - Infineon Technologies AG |
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SPB04N50C3 Datasheet(HTML) 4 Page - Infineon Technologies AG |
4 / 13 page 2003-10-07 Page 4 SPP04N50C3, SPB04N50C3 SPA04N50C3 Final data Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC=25°C - - 4.5 A Inverse diode direct current, pulsed ISM - - 13.5 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=400V, IF=IS , diF/dt=100A/µs - 280 - ns Reverse recovery charge Qrr - 2.3 - µC Peak reverse recovery current Irrm - 16 - A Peak rate of fall of reverse recovery current dirr/dt Tj=25°C - 860 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPA SPA Rth1 0.039 0.039 K/W Cth1 0.00007347 0.00007347 Ws/K Rth2 0.074 0.074 Cth2 0.0002831 0.0002831 Rth3 0.132 0.132 Cth3 0.0004062 0.0004062 Rth4 0.555 0.272 Cth4 0.001215 0.001215 Rth5 0.529 0.559 Cth5 0.00276 0.005633 Rth6 0.169 2.523 Cth6 0.029 0.412 SPP_B SPP_B External H eatsink Tj Tcase Tamb Cth1 Cth2 R th1 Rth,n Cth,n Ptot (t) |
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