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SPB04N50C3 Datasheet(PDF) 4 Page - Infineon Technologies AG

Part # SPB04N50C3
Description  Cool MOS Power Transistor
Download  13 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPB04N50C3 Datasheet(HTML) 4 Page - Infineon Technologies AG

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2003-10-07
Page 4
SPP04N50C3, SPB04N50C3
SPA04N50C3
Final data
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Inverse diode continuous
forward current
IS
TC=25°C
-
-
4.5
A
Inverse diode direct current,
pulsed
ISM
-
-
13.5
Inverse diode forward voltage
VSD
VGS=0V, IF=IS
-
1
1.2
V
Reverse recovery time
trr
VR=400V, IF=IS ,
diF/dt=100A/µs
-
280
-
ns
Reverse recovery charge
Qrr
-
2.3
-
µC
Peak reverse recovery current
Irrm
-
16
-
A
Peak rate of fall of reverse
recovery current
dirr/dt
Tj=25°C
-
860
-
A/µs
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
SPA
SPA
Rth1
0.039
0.039
K/W
Cth1
0.00007347 0.00007347 Ws/K
Rth2
0.074
0.074
Cth2
0.0002831
0.0002831
Rth3
0.132
0.132
Cth3
0.0004062
0.0004062
Rth4
0.555
0.272
Cth4
0.001215
0.001215
Rth5
0.529
0.559
Cth5
0.00276
0.005633
Rth6
0.169
2.523
Cth6
0.029
0.412
SPP_B
SPP_B
External H eatsink
Tj
Tcase
Tamb
Cth1
Cth2
R th1
Rth,n
Cth,n
Ptot (t)


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