SPB04N60S5 datasheet(7/11 Pages) INFINEON

Part #	SPB04N60S5

Description	Cool MOS??Power Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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7 / 11 page

2004-03-30

Rev. 2.1

Page 7

SPP04N60S5

SPB04N60S5

9 Typ. gate charge

VGS = f (QGate)

parameter: ID = 4.5 A pulsed

0

4

8

12

16

20

nC

26

QGate

0

2

4

6

8

10

12

V

16

SPP04N60S5

0.2 V

DS max

0.8 V

DS max

10 Forward characteristics of body diode

IF = f (VSD)

parameter: Tj , tp = 10 µs

0

0.4

0.8

1.2

1.6

2

2.4

V

3

VSD

-2

10

-1

10

0

10

1

10

A

SPP04N60S5

T

j = 25 °C typ

T

j = 25 °C (98%)

T

j = 150 °C typ

T

j = 150 °C (98%)

11 Avalanche SOA

IAR = f (tAR)

par.: Tj ≤ 150 °C

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

4

µs

tAR

0

0.5

1

1.5

2

2.5

3

3.5

4

A

5

Tj(START)=25°C

Tj(START)=125°C

12 Avalanche energy

EAS = f (Tj)

par.: ID = 3.4 A, VDD = 50 V

20

40

60

80

100

120

°C

160

Tj

0

20

40

60

80

100

120

mJ

160

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