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SPP11N60C2 Datasheet(PDF) 8 Page - Infineon Technologies AG |
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SPP11N60C2 Datasheet(HTML) 8 Page - Infineon Technologies AG |
8 / 14 page 2002-08-12 Page 8 SPP11N60C2, SPB11N60C2 SPA11N60C2 Final data 13 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 µs 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD -1 10 0 10 1 10 2 10 A SPP11N60C2 T j = 25 °C typ T j = 25 °C (98%) T j = 150 °C typ T j = 150 °C (98%) 14 Typ. switching time t = f (ID), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, RG=6.8Ω 0 5 10 15 20 A 30 ID 0 10 1 10 2 10 3 10 ns tr td(off) tf td(on) 15 Typ. switching time t = f (RG), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, ID=11 A 0 10 20 30 40 50 Ω 70 RG 0 10 1 10 2 10 3 10 ns td(on) tr tf td(off) 16 Typ. switching losses E = f (ID), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, RG=6.8Ω 0 5 10 15 A 25 ID 0 0.1 0.2 0.3 0.4 0.5 mWs 0.7 *) Eon includes SDP06S60 diode commutation losses. Eon* Eoff |
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