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SPI12N50C3 Datasheet(PDF) 4 Page - Infineon Technologies AG |
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SPI12N50C3 Datasheet(HTML) 4 Page - Infineon Technologies AG |
4 / 13 page 2004-03-29 Rev. 2.1 Page 4 SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC=25°C - - 11.6 A Inverse diode direct current, pulsed ISM - - 34.8 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=400V, IF=IS , diF/dt=100A/µs - 380 - ns Reverse recovery charge Qrr - 5.5 - µC Peak reverse recovery current Irrm - 38 - A Peak rate of fall of reverse recovery current dirr/dt Tj=25°C - 1100 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPP_B_I SPA SPP_B_I SPA Rth1 0.015 0.15 K/W Cth1 0.0001878 0.0001878 Ws/K Rth2 0.03 0.03 Cth2 0.0007106 0.0007106 Rth3 0.056 0.056 Cth3 0.000988 0.000988 Rth4 0.197 0.194 Cth4 0.002791 0.002791 Rth5 0.216 0.413 Cth5 0.007285 0.007401 Rth6 0.083 2.522 Cth6 0.063 0.412 External H eatsink Tj Tcase Tamb Cth1 Cth2 R th1 Rth,n Cth,n Ptot (t) |
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