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SPA17N80C3 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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1 page 
2003-07-03 Page 1 SPP17N80C3, SPB17N80C3 SPA17N80C3 Final data Cool MOS™ Power Transistor VDS 800 V RDS(on) 0.29 Ω ID 17 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO220-3-31 1 2 3 Marking 17N80C3 17N80C3 17N80C3 Type Package Ordering Code SPP17N80C3 P-TO220-3-1 Q67040-S4353 SPB17N80C3 P-TO263-3-2 Q67040-S4354 SPA17N80C3 P-TO220-3-31 Q67040-S4441 Maximum Ratings Parameter Symbol Value Unit SPA Continuous drain current TC = 25 °C TC = 100 °C ID 17 11 171) 111) A Pulsed drain current, tp limited by Tjmax ID puls 51 51 A Avalanche energy, single pulse ID=3.4A, VDD=50V EAS 670 670 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=17A, VDD=50V EAR 0.5 0.5 Avalanche current, repetitive tAR limited by Tjmax IAR 17 17 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 208 42 W SPP_B Operating and storage temperature Tj , Tstg -55...+150 °C |
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