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SPW12N50C3 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SPW12N50C3 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 11 page 2003-06-30 Page 1 SPW12N50C3 Final data Cool MOS™ Power Transistor VDS @ Tjmax 560 V RDS(on) 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO247 Type Package Ordering Code SPW12N50C3 P-TO247 Q67040-S4580 Marking 12N50C3 Maximum Ratings Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID 11.6 7 A Pulsed drain current, t p limited by Tjmax ID puls 34.8 Avalanche energy, single pulse ID = 5.5 A, VDD = 50 V EAS 340 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID = 11.6 A, VDD = 50 V EAR 0.6 Avalanche current, repetitive tAR limited by Tjmax IAR 11.6 A Reverse diode dv/dt IS=11.6A, VDS=480V, Tj=125°C dv/dt 6 V/ns Gate source voltage VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 125 W Operating and storage temperature Tj , Tstg -55... +150 °C |
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