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SPW47N60C3 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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SPW47N60C3 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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2003-11-06 Page 1 SPW47N60C3 Cool MOS™ Power Transistor VDS @ Tjmax 650 V RDS(on) 0.07 Ω ID 47 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances P-TO247 Type Package Ordering Code SPW47N60C3 P-TO247 Q67040-S4491 Marking 47N60C3 Maximum Ratings Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID 47 30 A Pulsed drain current, tp limited by Tjmax ID puls 141 Avalanche energy, single pulse ID = 10 A, VDD = 50 V EAS 1800 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID = 20 A, VDD = 50 V EAR 1 Avalanche current, repetitive tAR limited by Tjmax IAR 20 A Gate source voltage static VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 415 W Operating and storage temperature Tj , Tstg -55... +150 °C |
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