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TDA21201-S7 Datasheet(PDF) 9 Page - Infineon Technologies AG |
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TDA21201-S7 Datasheet(HTML) 9 Page - Infineon Technologies AG |
9 / 15 page Preliminary Data Sheet TDA21201 Page 9 Apr-29, 2002 Over voltage protection of Vcc / Avalanche avoidance The voltage at the Vcc pins of the TDA21201 rises above the nominal DC value of the Vcc supply (= + 12 V) during the turn-off of the High Side MOSFET. The voltage overshoots at the Vcc pins according to: vcc(t) = Vcc + Lstray * di/dt vcc (t) = instantaneous value of vcc; Vcc = +12 V DC; Lstray = stray inductance of the PCB traces + the input capacitor’s ESL + the parasitic inductance of the TDA21201 package itself; di/dt = slew rate of the High Side current during its turn-off. Vcc = +12 V TDA21201 Lstray HS Cin Lout LS This equation reveals that Lstray should be made as small as possible (as vcc(t) is limited by the breakdown voltage of the device, Vcc is given by the application, di/dt should be as large as possible to reduce switching losses) using proper layout techniques and low ESL capacitors, e.g. ceramics, between the Vcc and GND pins of the Integrated Switch. To protect the Integrated Switch from unallowable voltage spikes, the slew rate of the High Side current di/dt is controlled in a way so that the overall voltage (between Vcc pins to GND pins) does not exceed 20 V (measured between the Vcc and GND pins at the PCB, this voltage will slightly exceed the 20 V limit within the package/at the chips). As the MOSFETs have a Breakdown voltage rating Vds = 30 V, it is made sure that they are never driven into avalanche. The slew rate control is implemented using the principal of the active zener clamp technique: When vcc(t) rises during turn-off then the effective gate-drain voltage of the High Side MOSFET rises, too. If, for what reason ever, the vcc(t) overshoot approaches a value that possibly could damage the integrated Dz Driver t V < 20 vcc HS is turned off |
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