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AP18P10AGH-HF Datasheet(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP18P10AGH-HF Datasheet(HTML) 4 Page - Advanced Power Electronics Corp. |
4 / 5 page AP18P10AGH/J-HF Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Drain Current v.s. Case Temperature 4 0 2 4 6 8 10 12 0 10203040 Q G , Total Gate Charge (nC) V DS = - 80 V I D = - 8 A 0 400 800 1200 1600 2000 1 5 9 1317 2125 29 -V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0 1 10 100 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0 4 8 12 16 02 46 8 -V GS , Gate-to-Source Voltage (V) T j =150 o C T j =25 o C V DS = -5V Operation in this area limited by RDS(ON) 0 4 8 12 16 25 50 75 100 125 150 T C , Case Temperature ( o C ) T j = -40 o C |
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