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80-M006PNB010SA-K615C-1B Datasheet(PDF) 7 Page - Vincotech |
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80-M006PNB010SA-K615C-1B Datasheet(HTML) 7 Page - Vincotech |
7 / 17 page 80-M006PNB010SA*-K615* datasheet Figure 13 FWD Figure 14 FWD Typical reverse recovery charge as a Typical reverse recovery charge as a function of collector current function of IGBT turn on gate resistor Q rr = f(I C) Q rr = f(R gon) At T j = 25/150 °C T j = 25/150 °C V CE = 300 V V R = 300 V V GE = ±15 V I F = 10 A R gon = 32 V GE = ±15 V Figure 15 FWD Figure 16 FWD Typical reverse recovery current as a Typical reverse recovery current as a function of collector current function of IGBT turn on gate resistor I RRM = f(I C) I RRM = f(R gon) T j = 25/150 °C T j = 25/150 °C V CE = 300 V V R = 300 V V GE = ±15 V I F = 10 A R gon = 32 V GE = ±15 V Inverter Switch / Inverter Diode Tj = Tjmax - 25°C IRRM Tj = 25°C IRRM 0 5 10 15 20 25 0 32 64 96 128 160 R gon ( Ω Ω Ω Ω ) Tj = Tjmax -25°C Qrr Tj = 25°C Qrr 0,0 0,4 0,8 1,2 1,6 2,0 0 32 64 96 128 160 R g on ( Ω) Tj = Tjmax -25°C IRRM Tj = 25°C IRRM 0 2 4 6 8 10 12 0 5 10 15 20 I C (A) Tj = Tjmax -25°C Qrr Tj = 25°C Qrr 0,0 0,5 1,0 1,5 2,0 2,5 0 5 10 15 20 I C (A) 12 Jan. 2016 / Revision 3 copyright Vincotech 7 |
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