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AP2310GK-HF Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP2310GK-HF Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 5 page AP2310GK-HF Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 60V ▼ Lower Gate Charge RDS(ON) 90mΩ ▼ Fast Switching Characteristic ID 4.1A ▼ RoHS Compliant & Halogen-Free Description Absolute Maximum Ratings@Tj=25 oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 45 ℃/W Data and specifications subject to change without notice Parameter Operating Junction Temperature Range Drain Current, VGS @ 10V 3 3.2 Pulsed Drain Current 1 10 Total Power Dissipation Storage Temperature Range -55 to 150 Thermal Data Gate-Source Voltage +20 Drain Current, VGS @ 10V 3 4.1 Parameter Rating Drain-Source Voltage 60 2.78 -55 to 150 201501212 Halogen-Free Product 1 G D S D D S G SOT-223 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package. |
Similar Part No. - AP2310GK-HF_16 |
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Similar Description - AP2310GK-HF_16 |
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