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AP50T10GI-HF Datasheet(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP50T10GI-HF Datasheet(HTML) 4 Page - Advanced Power Electronics Corp. |
4 / 5 page AP50T10GI-HF Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Drain Current v.s. Case Temperature Fig 12. Gate Charge Waveform 4 0 2 4 6 8 10 12 0 102030 405060 Q G , Total Gate Charge (nC) I D =16A V DS =80V Q VG 10V QGS QGD QG Charge 0 1000 2000 3000 1 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 1 10 100 1000 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC Operation in this area limited by RDS(ON) 0 4 8 12 16 20 24 25 50 75 100 125 150 175 T C , Case Temperature ( o C ) |
Similar Part No. - AP50T10GI-HF_16 |
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Similar Description - AP50T10GI-HF_16 |
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