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K6E0808C1C-12 Datasheet(PDF) 5 Page - Samsung semiconductor |
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K6E0808C1C-12 Datasheet(HTML) 5 Page - Samsung semiconductor |
5 / 8 page K6E0808C1C-C CMOS SRAM PRELIMINARY Rev 4.0 - 5 - February 1998 WRITE CYCLE Parameter Symbol K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C-20 Unit Min Max Min Max Min Max Write Cycle Time tWC 12 - 15 - 20 - ns Chip Select to End of Write tCW 9 - 11 - 13 - ns Address Setup Time tAS 0 - 0 - 0 - ns Address Valid to End of Write tAW 9 - 12 - 13 - ns Write Pulse Width(OE High) tWP 9 - 12 - 13 - ns Write Pulse Width(OE Low) tWP1 12 - 15 - 20 - ns Write Recovery Time tWR 0 - 0 - 0 - ns Write to Output High-Z tWHZ 0 6 0 8 0 8 ns Data to Write Time Overlap tDW 7 - 8 - 10 - ns Data Hold from Write Time tDH 0 - 0 - 0 - ns End Write to Output Low-Z tOW 0 - 0 - 0 - ns Address Data Out Previous Valid Data Valid Data TIMMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH) tAA tRC tOH TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH) CS Address OE Data out tAA tOLZ tLZ(4,5) tOH tOHZ tRC tOE tCO tPU tPD Valid Data tHZ(3,4,5) 50% 50% VCC Current ICC ISB |
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