K6E0808C1C-12 datasheet(5/8 Pages) SAMSUNG

Part #	K6E0808C1C-12

Description	32Kx8 Bit High Speed CMOS Static RAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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K6E0808C1C-C

CMOS SRAM

PRELIMINARY

Rev 4.0

- 5 -

February 1998

WRITE CYCLE

Parameter

Symbol

K6E0808C1C-12

K6E0808C1C-15

K6E0808C1C-20

Unit

Min

Max

Min

Max

Min

Max

Write Cycle Time

tWC

12

-

15

-

20

-

ns

Chip Select to End of Write

tCW

9

-

11

-

13

-

ns

Address Setup Time

tAS

0

-

0

-

0

-

ns

Address Valid to End of Write

tAW

9

-

12

-

13

-

ns

Write Pulse Width(OE High)

tWP

9

-

12

-

13

-

ns

Write Pulse Width(OE Low)

tWP1

12

-

15

-

20

-

ns

Write Recovery Time

tWR

0

-

0

-

0

-

ns

Write to Output High-Z

tWHZ

0

6

0

8

0

8

ns

Data to Write Time Overlap

tDW

7

-

8

-

10

-

ns

Data Hold from Write Time

tDH

0

-

0

-

0

-

ns

End Write to Output Low-Z

tOW

0

-

0

-

0

-

ns

Address

Data Out

Previous Valid Data

Valid Data

TIMMING DIAGRAMS

TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)

tAA

tRC

tOH

TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)

CS

Address

OE

Data out

tAA

tOLZ

tLZ(4,5)

tOH

tOHZ

tRC

tOE

tCO

tPU

tPD

Valid Data

tHZ(3,4,5)

50%

VCC

Current

ICC

ISB

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