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AP4835GM-HF Datasheet(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP4835GM-HF Datasheet(HTML) 4 Page - Advanced Power Electronics Corp. |
4 / 5 page AP4835GM-HF Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Circuit 4 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) T A =25 o C Single Pulse 100us 1ms 10ms 100ms 1s DC 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 125℃/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0 2 4 6 8 10 12 0 1020 3040 Q G , Total Gate Charge (nC) I D = -7A V DS = -15V 100 1000 10000 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss Q VG -4.5V QGS QGD QG Charge 0 10 20 30 40 012 3456 -V GS , Gate-to-Source Voltage (V) T j =150 o C T j =25 o C V DS =-5V . |
Similar Part No. - AP4835GM-HF_16 |
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Similar Description - AP4835GM-HF_16 |
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