AP4800GEM datasheet(4/6 Pages) A-POWER

Part #	AP4800GEM

Description	Fast Switching Characteristic

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Manufacturer	A-POWER [Advanced Power Electronics Corp.]

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AP4800GEM

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Transfer Characteristics

Fig 12. Drain Current v.s. Ambient

Temperature

4

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

10

100

1000

t , Pulse Width (s)

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

PDM

t

T

0.02

Duty factor = t/T

Peak Tj = PDM x Rthja + Ta

Rthja = 125℃/W

0.01

0.1

1

10

100

0.01

0.1

1

10

100

V DS , Drain-to-Source Voltage (V)

T A =25

o C

Single Pulse

100us

1ms

10ms

100ms

1s

DC

0

2

4

6

8

0246

8

10

12

Q G , Total Gate Charge (nC)

I D =5 A

V DS =15V

0

200

400

600

800

1000

1

5

9

1317

2125

2933

V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

0

10

20

30

40

012

3456

V GS , Gate-to-Source Voltage (V)

T j =150

o C

T j =25

o C

V DS =5V

T j = -55

o C

0

2

4

6

8

10

25

50

75

100

125

150

T A , Ambient Temperature (

o C )

Operation in this

area limited by

RDS(ON)

.

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