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AP4800GEM Datasheet(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP4800GEM Datasheet(HTML) 4 Page - Advanced Power Electronics Corp. |
4 / 6 page AP4800GEM Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Drain Current v.s. Ambient Temperature 4 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 125℃/W 0.01 0.1 1 10 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) T A =25 o C Single Pulse 100us 1ms 10ms 100ms 1s DC 0 2 4 6 8 0246 8 10 12 Q G , Total Gate Charge (nC) I D =5 A V DS =15V 0 200 400 600 800 1000 1 5 9 1317 2125 2933 V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0 10 20 30 40 012 3456 V GS , Gate-to-Source Voltage (V) T j =150 o C T j =25 o C V DS =5V T j = -55 o C 0 2 4 6 8 10 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) Operation in this area limited by RDS(ON) . |
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