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AP25N10GH-HF Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP25N10GH-HF Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
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1 / 5 page  AP25N10GH/J-HF Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge BVDSS 100V ▼ Single Drive Requirement RDS(ON) 80mΩ ▼ RoHS Compliant & Halogen-Free ID 23A Description Absolute Maximum Ratings@Tj=25 oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 1.3 ℃ /W Rthj-a 62.5 ℃ /W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃ /W Data and specifications subject to change without notice 201410214 Halogen-Free Product 1 -55 to 150 Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Drain-Source Voltage 100 Gate-Source Voltage +20 Parameter Rating Drain Current, VGS @ 10V 23 Drain Current, VGS @ 10V 14.6 -55 to 150 Pulsed Drain Current 1 80 Total Power Dissipation 96 Thermal Data Parameter Storage Temperature Range Operating Junction Temperature Range G D S G D S TO-251(J) G D S TO-252(H) AP25N10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP25N10GJ) are available for low-profile applications. . |
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