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AP40T03GJ-HF Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP40T03GJ-HF Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 5 page AP40T03GH/J-HF Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 30V ▼ Low Gate Charge RDS(ON) 25mΩ ▼ Fast Switching Characteristic ID 28A ▼ RoHS Compliant & Halogen-Free Description Absolute Maximum Ratings@Tj=25 oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 4 ℃ /W Rthj-a 62.5 ℃ /W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃ /W Data and specifications subject to change without notice 201409017 Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 1 Halogen-Free Product Parameter Rating Drain-Source Voltage 30 Gate-Source Voltage +25 Drain Current, VGS @ 10V 28 Drain Current, VGS @ 10V 18 Pulsed Drain Current 1 95 Total Power Dissipation 31.25 -55 to 150 Operating Junction Temperature Range -55 to 150 Thermal Data Parameter Storage Temperature Range G D S TO-252(H) G D S TO-251(J) G D S AP40T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP40T03GJ) are available for low-profile applications. . |
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