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BQ29733DSET Datasheet(PDF) 5 Page - Texas Instruments

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Part # BQ29733DSET
Description  Cost-Effective Voltage and Current Protection Integrated Circuit
Download  31 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

BQ29733DSET Datasheet(HTML) 5 Page - Texas Instruments

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bq2970, bq2971, bq2972, bq2973
www.ti.com
SLUSBU9C – MARCH 2014 – REVISED MARCH 2016
Product Folder Links: bq2970 bq2971 bq2972 bq2973
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Copyright © 2014–2016, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7 Specifications
7.1 Absolute Maximum Ratings
(1)
MIN
MAX
UNIT
Supply control and input
Input voltage: BAT
–0.3
12
V
V– pin(pack–)
BAT – 28
BAT + 0.3
V
FET drive and protection
DOUT (Discharge FET Output), GDSG (Discharge FET Gate Drive)
VSS – 0.3
BAT + 0.3
V
COUT (Charge FET Output), GCHG (Charge FET Gate Drive)
BAT – 28
BAT + 0.3
V
Operating temperature: TFUNC
–40
85
°C
Storage temperature, Tstg
–55
150
°C
(1)
Electrostatic discharge (ESD) to measure device sensitivity and immunity to damage caused by assembly line electrostatic discharges
into the device.
(2)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as 1000 V
may have higher performance.
(3)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as 250 V
may have higher performance.
7.2 ESD Ratings
VALUE
UNIT
VESD
(1)
Electrostatic
Discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(2)
±2000
V
Charged device model (CDM), per JEDEC specification JESD22-C101, all
pins(3)
±500
(1)
For more information about traditional and new thermal metrics, see the IC package Thermal Metrics application report, SPRA953.
7.3 Recommended Operating Conditions
(1)
MIN
MAX
UNIT
Supply control and
input
Positive input voltage: BAT
–0.3
8
V
Negative input voltage: V–
BAT – 25
BAT
V
FET drive and
protection
Discharge FET control: DOUT
VSS
BAT
V
Charge FET control: COUT
BAT – 25
BAT
V
Temperature Ratings
Operating temperature: TAmb
–40
85
°C
Storage temperature: TS
–55
150
°C
Lead temperature (soldering 10 s)
300
°C
Thermal resistance junction to ambient,
θJA
(1)
250
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report (SPRA953).
(2)
The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
(3)
The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-
standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(4)
The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
7.4 Thermal Information
THERMAL METRIC(1)
bq297xx
UNIT
DSE (WSON)
12 PINS
RθJA, High K
Junction-to-ambient thermal resistance(2)
190.5
°C/W
RθJC(top)
Junction-to-case(top) thermal resistance(3)
94.9
°C/W
RθJB
Junction-to-board thermal resistance(4)
149.3
°C/W


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