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LM36923H

SNVSAF3A – FEBRUARY 2016 – REVISED FEBRUARY 2016

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Copyright © 2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

IN

Input voltage

–0.3

6

V

OUT

Output overvoltage sense input

–0.3

40

V

SW

Inductor connection

–0.3

40

V

LED1, LED2, LED3

LED string cathode connection

–0.3

30

V

HWEN, PWM, SDA,

SCL, ASEL

Logic I/Os

–0.3

6

V

150

°C

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as ±2000

V may actually have higher performance.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as ±500 V

may actually have higher performance.

6.2 ESD Ratings

VALUE

UNIT

Electrostatic

discharge

±2000

V

±500

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

IN

Input voltage

2.5

5.5

V

OUT

Overvoltage sense input

0

38

V

SW

Inductor connection

0

38

V

LED1, LED2, LED3

LED string cathode connection

0

29.5

V

HWEN, PWM, SDA,

SCL, ASEL

Logic I/Os

0

5.5

V

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

6.4 Thermal Information

LM36923H

UNIT

YFQ (DSBGA)

12 PINS

Junction-to-ambient thermal resistance

88.9

°C/W

Junction-to-case (top) thermal resistance

0.7

°C/W

Junction-to-board thermal resistance

43.9

°C/W

Junction-to-top characterization parameter

2.9

°C/W

Junction-to-board characterization parameter

43.7

°C/W