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TPS22930A Datasheet(PDF) 4 Page - Texas Instruments |
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TPS22930A Datasheet(HTML) 4 Page - Texas Instruments |
4 / 23 page 4 TPS22930 SLVSBL3B – NOVEMBER 2012 – REVISED FEBRUARY 2016 www.ti.com Product Folder Links: TPS22930 Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary precautions. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22- C101(2) ±1000 (1) Refer to Application Information section. 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VIN Input voltage range 1.4 5.5 V VON ON voltage range 0 5.5 V VOUT Output voltage range 0 VIN V VIH High-level input voltage, ON VIN = 3.61 V to 5.5 V 1.1 5.5 V VIN = 1.4 V to 3.6V 1.1 5.5 VIL Low-level input voltage, ON VIN = 3.61 V to 5.5 V 0 0.6 V VIN = 1.4 V to 3.6 V 0 0.4 CIN Input capacitor 1(1) µF (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 7.4 Thermal Information THERMAL METRIC(1) TPS22930 UNIT YZV (DSBGA) 4 PINS RθJA Junction-to-ambient thermal resistance 189.1 °C/W RθJC(top) Junction-to-case (top) thermal resistance 1.9 °C/W RθJB Junction-to-board thermal resistance 36.8 °C/W ψJT Junction-to-top characterization parameter 11.3 °C/W ψJB Junction-to-board characterization parameter 36.8 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance – °C/W |
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