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AP30G120SW Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP30G120SW Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 4 page Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat)=3.0V@IC=30A Absolute Maximum Ratings@Tj=25 oC(unless otherwise specified) , 1/8" from case for 5 seconds . Notes: 1.Pulse width limited by max . junction temperature . Thermal Data Symbol Rthj-c(IGBT) Rthj-c(Diode) Rthj-a Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Min. Typ. Max. Units IGES -- +500 nA ICES -- 1 mA VCE(sat) - 3 3.6 V - 3.8 - V VGE(th) 3- 7 V Qg - 63 100 nC Qge -12 - nC Qgc -32 - nC td(on) -40 - ns tr -45 - ns td(off) - 125 - ns tf - 430 860 ns Eon - 1.3 - mJ Eoff - 3.1 - mJ Cies - 1400 2240 pF Coes - 120 - pF Cres -15 - pF VF - 1.7 2.5 V VF - 2.1 2.9 V trr - 140 - ns Qrr - 0.8 - uC Data and specifications subject to change without notice +30 60 BIPOLAR TRANSISTOR WITH FRD. Collector Current 30 A Collector Current Gate-Emitter Voltage A ℃ W ℃ ℃ A Maximum Lead Temp. for Soldering Purposes f=1.0MHz Gate-Collector Charge Total Gate Charge Parameter Gate-to-Emitter Leakage Current VGE=0V VGE=15V Collector-Emitter Saturation Voltage ℃ /W ℃ /W Thermal Resistance Junction-Case Parameter Value 0.6 Thermal Resistance Junction-Case 1.5 ℃ /W Units AP30G120SW 1200V Rating Collector-Emitter Voltage Units V 1200 Halogen-Free Product ▼ CO-PAK, IGBT With FRD Parameter 40 300 Operating Junction Temperature Range -55 to 150 Diode Forward Current Diode Pulse Forward Current VGE=+30V, VCE=0V TJ TL Maximum Power Dissipation Test Conditions Storage Temperature Range 208 Thermal Resistance Junction-Ambient Collector-Emitter Leakage Current Output Capacitance VCC=500V VCE=1200V, VGE=0V Turn-on Delay Time Fall Time Turn-On Switching Loss Gate-Emitter Charge Gate Threshold Voltage Turn-Off Switching Loss IC@TC=25℃ TSTG 20 PD@TC=25℃ -55 to 150 Pulsed Collector Current 1 ICM IC@TC=100℃ IF@TC=25℃ IFM Reverse Transfer Capacitance Reverse Recovery Charge di/dt = 100 A/μs Forward Voltage IF=10A Forward Voltage IF=20A Reverse Recovery Time IF=10A Electrical Characteristics of Diode@Tj=25℃(unless otherwise specified) VCE=30V Input Capacitance VGE=15V, IC=30A VCE=VGE, IC=250uA VCC=600V, Ic=30A, VGE=15V, RG=5Ω, Inductive Load Rise Time Turn-off Delay Time VGE=15V, IC=60A IC=30A Symbol VCES VGE ▼ RoHS Compliant & Halogen-Free 201502253 A 30A VCES IC V 120 A 1 40 IF@TC=100℃ Diode Forward Current 10 A G C E TO-3P G C E . |
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