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AP70SL950AH Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP70SL950AH Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 6 page AP70SL950AH Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% R g & UIS Test VDS @ Tj,max. 750V ▼ Fast Switching Characteristic RDS(ON) 0.95Ω ▼ Simple Drive Requirement ID 3 4.5A ▼ RoHS Compliant & Halogen-Free Description Absolute Maximum Ratings@Tj=25 oC(unless otherwise specified) Symbol Units VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Drain Current, VGS @ 10V 3 A ID@TC=100℃ Drain Current, VGS @ 10V 3 A IDM Pulsed Drain Current 1 A dv/dt MOSFET dv/dt Ruggedness (VDS = 0 …400V ) V/ns PD@TC=25℃ Total Power Dissipation W PD@TA=25℃ Total Power Dissipation 4 W EAS Single Pulse Avalanche Energy 5 mJ dv/dt Peak Diode Recovery dv/dt 6 V/ns TSTG Storage Temperature Range ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.4 ℃/W Rthj-a 62.5 ℃/W Data & specifications subject to change without notice 36.7 700 +20 4.5 2.8 12 Halogen-Free Product 201507271 2 -55 to 150 -55 to 150 Maximum Thermal Resistance, Junction-ambient 4 1 Parameter Rating 27 15 50 G D S AP70SL950A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G D S TO-252(H) . |
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