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bq24259

SLUSCF0A – NOVEMBER 2015 – REVISED JANUARY 2016

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(1)

The inherent switching noise voltage spikes should not exceed the absolute maximum rating on either the BTST or SW pins. A tight

layout minimizes switching noise.

7.3 Recommended Operating Conditions

MIN

MAX

UNIT

Input voltage

3.9

V

Output current (SYS)

3.5

A

Battery voltage

4.4

V

Fast charging current

2

A

Discharging current with internal MOSFET

5.5

A

Operating free-air temperature range

–40

85

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report (SPRA953).

7.4 Thermal Information

bq24259

UNIT

RGE (VQFN)

24 PIN

Junction-to-ambient thermal resistance

32.2

°C/W

Junction-to-case (top) thermal resistance

29.8

Junction-to-board thermal resistance

9.1

Junction-to-top characterization parameter

0.3

Junction-to-board characterization parameter

9.1

Junction-to-case (bottom) thermal resistance

2.2

7.5 Electrical Characteristics

otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

QUIESCENT CURRENTS

Battery discharge current (BAT, SW, SYS)

and VBUS

5

µA

High-Z Mode, or no VBUS, BATFET disabled

(REG07[5] = 1), –40°C – 85°C

16

20

µA

High-Z Mode, or no VBUS, BATFET enabled

(REG07[5] = 0), –40°C – 85°C

32

55

µA

Input supply current (VBUS)

15

30

µA

switching

1.5

3

mA

4

mA

3.5

mA

Battery discharge current in boost mode

switching

3.5

mA

VBUS/BAT POWER UP

VBUS operating voltage

3.9

6.2

V

3.6

V

Sleep mode falling threshold

35

80

120

mV

Sleep mode rising threshold

170

250

350

mV

VBUS over-voltage rising threshold

6.2

6.6

V

VBUS over-voltage falling hysteresis

250

mV

2.3

V

Battery depletion threshold

2.4

2.6

V

Battery depletion rising hysteresis

200

mV