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BQ24259RGET Datasheet(PDF) 7 Page - Texas Instruments |
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BQ24259RGET Datasheet(HTML) 7 Page - Texas Instruments |
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7 / 48 page  7 bq24259 www.ti.com SLUSCF0A – NOVEMBER 2015 – REVISED JANUARY 2016 Product Folder Links: bq24259 Submit Documentation Feedback Copyright © 2015–2016, Texas Instruments Incorporated Electrical Characteristics (continued) V(VBUS_UVLOZ) < V(VBUS) < V(ACOV) and V(VBUS) > V(BAT) + V(SLEEP), TJ = –40°C to 125°C and TJ = 25°C for typical values (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(VBUSMIN) Bad adapter detection threshold V(VBUS) falling 3.8 V I(BADSRC) Bad adapter detection current source 30 mA POWER PATH MANAGEMENT V(SYS_MAX) Maximum DC system voltage output BATFET (Q4) off, V(BAT) up to 4.35 V 4.43 V V(SYS_MIN) Minimum DC system voltage output REG01[3:1] = 101, V(SYS_MIN) = 3.5 V 3.5 3.65 V RON(RBFET) Top reverse blocking MOSFET on- resistance between VBUS and PMIID 35 48 m Ω RON(HSFET) Internal top switching MOSFET on- resistance between PMID and SW TJ = –40°C – 85°C 45 57 m Ω TJ = -40°C – 125°C 45 65 RON(LSFET) Internal bottom switching MOSFET on- resistance between SW and PGND TJ = –40°C – 85°C 67 88 m Ω TJ = -40°C – 125°C 67 98 V(FWD) BATFET forward voltage in supplement mode BAT discharge current 10 mA 30 mV V(SYS_BAT) SYS/BAT comparator V(BAT) < V(SYS_MIN) , V(SYS) falling 80 mV V(BAT) > V(SYS_MIN) , V(SYS) falling 180 mV V(BATGD) Battery good comparator rising threshold V(BAT) rising 3.55 V V(BATGD_HYST) Battery good comparator falling threshold V(BAT) falling 100 mV BATTERY CHARGER V(BAT_REG_ACC) Charge voltage regulation accuracy V(BAT) = 4.112 V and 4.208 V –0.5% 0.5% I(ICHG_REG_ACC) Fast charge current regulation accuracy V(BAT) = 3.8 V, I(CHG) = 1024 mA, TJ = 25°C -4% 4% V(BAT) = 3.8 V, I(CHG) = 1024 mA, TJ = -20°C – 125°C -7% 7% V(BAT) = 3.8 V, ICHG = 1792 mA, TJ = -20°C – 125°C –10% 10% I(CHG) Charge current with 20% option on V(BAT) = 3.1 V, I(CHG) = 104 mA, REG02 = 03 and REG02[0] = 1 75 175 mA V(BATLOWV) Battery LOWV falling threshold Fast charge to precharge, REG04[1] = 1 2.6 2.8 2.9 V V(BATLOWV_HYST) Battery LOWV rising threshold Precharge to fast charge, REG04[1] = 1 (Typical 200-mV hysteresis) 2.8 3 3.1 V I(PRECHG_ACC) Precharge current regulation accuracy V(BAT) = 2.6 V, I(CHG) = 256 mA –20% 20% I(TYP_TERM_ACC) Typical termination current I(TERM) = 256 mA, I(CHG) = 2048 mA 265 mA I(TERM_ACC) Termination current accuracy I(TERM) = 256 mA, I(CHG) = 2048 mA –22.5% 22.5% V(SHORT) Battery short voltage V(BAT) falling 2.0 V V(SHORT_HYST) Battery Short Voltage hysteresis V(BAT) rising 200 mV I(SHORT) Battery short current V(BAT) < 2.2 V 100 mA V(RECHG) Recharge threshold below VBAT_REG V(BAT) falling, REG04[0] = 0 100 mV t(RECHG) Recharge deglitch time V(BAT) falling, REG04[0] = 0 20 ms RON(BATFET) SYS-BAT MOSFET on-resistance TJ = 25°C 24 28 m Ω TJ = –40°C – 125°C 24 35 INPUT VOLTAGE/CURRENT REGULATION V(INDPM_REG_ACC) Input voltage regulation accuracy -2% 2% I(USB_DPM) USB Input current regulation limit, V(BUS) = 5 V, current pulled from SW USB100 85 100 mA USB150 125 150 mA USB500 440 500 mA USB900 750 900 mA I(ADPT_DPM) Input current regulation accuracy I(ADP) = 1.5 A, REG00[2:0] = 101 1.3 1.5 A IIN(START) Input current limit during system start up V(SYS) < 2.2 V 100 mA KILIM IIN = KILIM/RILIM IIN(DPM) = 1.5 A 395 435 475 A x Ω BAT OVERVOLTAGE PROTECTION V(BATOVP) Battery overvoltage threshold V(BAT) rising, as percentage of V(BAT_REG) 104% V(BATOVP_HYST) Battery overvoltage hysteresis V(BAT) falling, as percentage of V(BAT_REG) 2% tBATOVP Battery overvoltage deglitch time to disable charge 1 µs |
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