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CSD17579Q3AT Datasheet(PDF) 6 Page - Texas Instruments

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Part # CSD17579Q3AT
Description  N-Channel NexFET Power MOSFETs
Download  13 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

CSD17579Q3AT Datasheet(HTML) 6 Page - Texas Instruments

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TC - Case Temperature (°C)
-50
-25
0
25
50
75
100
125
150
175
0
5
10
15
20
25
D012
VDS - Drain-to-Source Voltage (V)
0.1
1
10
100
0.1
1
10
100
1000
D010
DC
10 ms
1 ms
100 µs
10 µs
TAV - Time in Avalanche (ms)
0.01
0.02 0.03
0.050.07 0.1
0.2
0.3
0.5 0.7
1
1
2
3
5
7
10
20
30
50
70
100
D011
TC = 25qC
TC = 125qC
TC - Case Temperature (°C)
-75
-50
-25
0
25
50
75
100
125
150
175
0.6
0.8
1
1.2
1.4
1.6
1.8
D008
VGS = 4.5 V
VGS = 10 V
VSD - Source-to-Drain Voltage (V)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0.0001
0.001
0.01
0.1
1
10
100
D010
D009
TC = 25°C
TC = 125°C
CSD17579Q3A
SLPS527A – SEPTEMBER 2014 – REVISED JANUARY 2016
www.ti.com
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
ID = 8 A
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
Single Pulse,
Max RθJC = 5.4°C/W
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
Figure 12. Maximum Drain Current vs Temperature
6
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