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LMG5200MOFT Datasheet(PDF) 1 Page - Texas Instruments |
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LMG5200MOFT Datasheet(HTML) 1 Page - Texas Instruments |
1 / 23 page SW PGND HS LI GaN Driver VCC AGND HO HB HI LO 8 9 VIN 1 HI LI 4 5 HS 3 HB 2 VCC 6 AGND 7 LMG5200 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community LMG5200 SNOSCY4B – MARCH 2015 – REVISED JANUARY 2016 GaN TECHNOLOGY PREVIEW LMG5200 80-V, GaN Half-Bridge Power Stage 1 Features 3 Description The LMG5200 device, a 80-V driver, GaN half-bridge 1 • Input Voltage up to 80-V DC power stage, provides an integrated power stage • Integrated 80-V, 18-m Ω, GaN FETs solution using enhancement-mode Gallium Nitride • Optimized Pinout for Easy PCB Layout (GaN) FETs. The device consists of two, 80-V GaN FETs driven by one high-frequency GaN FET driver • Internal Bootstrap Supply Voltage Clamping to in a half-bridge configuration. Prevent GaN FET Overdrive • Supply Rail Undervoltage Lockout The TTL logic compatible inputs can withstand input voltages up to 14 V regardless of the VCC voltage. • Independent High-Side and Low-Side TTL Logic The proprietary bootstrap voltage clamping technique Inputs ensures the gate voltages of the enhancement mode • Fast Propagation Times (29.5 ns Typical) GaN FETs are within a safe operating range. GaN • Excellent Propagation Delay Matching (2 ns FETs provide significant advantages for power conversion as they have near zero reverse recovery Typical) and very small input capacitance CISS. All the devices • Low Power Consumption are mounted on a completely bond-wire-free package platform with minimized package parasitic elements. 2 Applications The LMG5200 device is available in a 6 mm x 8 mm • Multi MHz Synchronous Buck Converters x 2 mm lead free package and can be easily mounted on PCBs. • Class D Amplifiers for Audio The device extends advantages of discrete GaN • 48-V Point-of-Load (POL) Converters for FETs by offering a more user-friendly interface. It is Industrial, Computing and Telecom an ideal solution for applications requiring high- frequency, high-efficiency operation in a small form factor. It reduces the board requirements for maintaining clearance and creepage requirements for medium voltage GaN applications while minimizing the loop inductances to ensure fast switching. Device Information(1) PART NUMBER PACKAGE BODY SIZE (NOM) LMG5200 QFN (9) 6.00 mm × 8.00 mm × 2.00 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Simplified Application 1 An IMPORTANT NOTICE at the end of this document addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. GaN TECHNOLOGY PREVIEW Information. Product in design phase of development. Subject to change or discontinuance without notice. |
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