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LMG5200MOFT Datasheet(PDF) 1 Page - Texas Instruments

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Part # LMG5200MOFT
Description  GaN Half-Bridge Power Stage
Download  23 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

LMG5200MOFT Datasheet(HTML) 1 Page - Texas Instruments

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SW
PGND
HS
LI
GaN Driver
VCC
AGND
HO
HB
HI
LO
8
9
VIN
1
HI
LI
4
5
HS
3
HB
2
VCC
6
AGND
7
LMG5200
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Folder
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LMG5200
SNOSCY4B – MARCH 2015 – REVISED JANUARY 2016
GaN TECHNOLOGY PREVIEW
LMG5200 80-V, GaN Half-Bridge Power Stage
1 Features
3 Description
The LMG5200 device, a 80-V driver, GaN half-bridge
1
Input Voltage up to 80-V DC
power stage, provides an integrated power stage
Integrated 80-V, 18-m
Ω, GaN FETs
solution using enhancement-mode Gallium Nitride
Optimized Pinout for Easy PCB Layout
(GaN) FETs. The device consists of two, 80-V GaN
FETs driven by one high-frequency GaN FET driver
Internal Bootstrap Supply Voltage Clamping to
in a half-bridge configuration.
Prevent GaN FET Overdrive
Supply Rail Undervoltage Lockout
The TTL logic compatible inputs can withstand input
voltages up to 14 V regardless of the VCC voltage.
Independent High-Side and Low-Side TTL Logic
The proprietary bootstrap voltage clamping technique
Inputs
ensures the gate voltages of the enhancement mode
Fast Propagation Times (29.5 ns Typical)
GaN FETs are within a safe operating range. GaN
Excellent Propagation Delay Matching (2 ns
FETs
provide
significant
advantages
for
power
conversion as they have near zero reverse recovery
Typical)
and very small input capacitance CISS. All the devices
Low Power Consumption
are mounted on a completely bond-wire-free package
platform with minimized package parasitic elements.
2 Applications
The LMG5200 device is available in a 6 mm x 8 mm
Multi MHz Synchronous Buck Converters
x 2 mm lead free package and can be easily mounted
on PCBs.
Class D Amplifiers for Audio
The device extends advantages of discrete GaN
48-V Point-of-Load (POL) Converters for
FETs by offering a more user-friendly interface. It is
Industrial, Computing and Telecom
an ideal solution for applications requiring high-
frequency, high-efficiency operation in a small form
factor.
It
reduces
the
board
requirements
for
maintaining clearance and creepage requirements for
medium voltage GaN applications while minimizing
the loop inductances to ensure fast switching.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
LMG5200
QFN (9)
6.00 mm × 8.00 mm × 2.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Application
1
An IMPORTANT NOTICE at the end of this document addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. GaN TECHNOLOGY PREVIEW Information. Product in design phase of
development. Subject to change or discontinuance without notice.


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