V

5V/div

OUT1

V

EN1_bar

5V/div

t-Time-2ms/div

I

2 A/div

IN

V

5V/div

OUT2

V

=V

EN1_bar

EN2_bar

V

5V/div

OUT1

V

EN1_bar

5V/div

t-Time-2ms/div

I

2 A/div

IN

V

5V/div

OUT2

V

=V

EN1_bar

EN2_bar

6

TPS2560, TPS2561

SLVS930B – DECEMBER 2009 – REVISED DECEMBER 2015

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Product Folder Links: TPS2560 TPS2561

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Copyright © 2009–2015, Texas Instruments Incorporated

Electrical Characteristics (continued)

PARAMETER

MIN

TYP

MAX

UNIT

SUPPLY CURRENT

Supply current, low-level output

0.1

2.0

μA

Supply current, high-level output

100

125

μA

85

110

μA

Reverse leakage current

0.01

1.0

μA

UNDERVOLTAGE LOCKOUT

UVLO

Low-level input voltage, IN

2.35

2.45

V

Hysteresis, IN

35

mV

FAULTx FLAG

Output low voltage, FAULTx

180

mV

Off-state leakage

1

μA

FAULTx deglitch

FAULTx assertion or de-assertion due to overcurrent condition

6

9

13

ms

THERMAL SHUTDOWN

OTSD2

Thermal shutdown threshold

155

°C

OTSD

Thermal shutdown threshold in current-limit

135

°C

Hysteresis

°C

(1)

(2)

The JEDEC high-K (2s2p) board used to derive this data was a 3in × 3in, multilayer board with 1-ounce internal power and ground

planes and 2-ounce copper traces on top and bottom of the board.

7.7 Dissipation Ratings

BOARD

PACKAGE

THERMAL

THERMAL

RESISTANCE

POWER RATING

DRC

41.6 °C/W

10.7 °C/W

2403 mW

7.8 Typical Characteristics

Figure 1. Turn-on Delay and Rise Time

Figure 2. Turn-off Delay and Fall Time