Electronic Components Datasheet Search |
|
TPS65150RGER Datasheet(PDF) 5 Page - Texas Instruments |
|
|
TPS65150RGER Datasheet(HTML) 5 Page - Texas Instruments |
5 / 47 page TPS65150 www.ti.com SLVS576B – SEPTEMBER 2005 – REVISED JANUARY 2016 6.3 Recommended Operating Conditions MIN NOM MAX UNIT VI Input voltage range 1.8 6 V VO Boost converter output voltage 15 V L Inductor(1) 4.7 µH TA Operating ambient temperature –40 85 °C TJ Operating junction temperature –40 125 °C (1) Refer to application section for further information. 6.4 Thermal Information TPS65150 THERMAL METRIC(1) PWP (HTSSOP) RGE (VQFN) UNIT 24 PINS 24 PINS RθJA Junction-to-ambient thermal resistance 36.4 34.3 °C/W RθJC(top) Junction-to-case (top) thermal resistance 18.8 36.2 °C/W RθJB Junction-to-board thermal resistance 15.9 12 °C/W ψJT Junction-to-top characterization parameter 0.4 0.5 °C/W ψJB Junction-to-board characterization parameter 15.7 12.1 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 1.3 3.2 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 6.5 Electrical Characteristics VI = 3.3 V, V(VS) = 10 V, TA = –40°C to 85°C, typical values are at TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY CURRENT VI Input voltage (VIN) 1.8 6 V Supply current (VIN) Device not switching 14 25 µA Supply current (SUP) Device not switching 1.9 3 mA Supply current (VCOM buffer) 750 1500 µA VIT– Undervoltage lockout threshold (VIN) VI falling 1.6 1.8 V VIT+ Undervoltage lockout threshold (VIN) VI rising 1.7 1.9 V Thermal shutdown temperature TJ rising 155 °C threshold Thermal shutdown temperature 10 °C hysteresis LOGIC SIGNALS VIH High-level input voltage (CTRL) 1.6 V VIL Low-level input voltage (CTRL) 0.4 V IIH, IIL Input current (CTRL) CTRL = VI or GND 0.01 0.2 µA BOOST CONVERTER VO Output voltage 15 V Vref Boost converter reference voltage (FB) 1.136 1.146 1.154 V IIB Input bias current (FB) 10 100 nA VO = 10 V 200 300 rDS(on) Drain-source on-state resistance (Q1) IDS = 500 mA m Ω VO = 5 V 305 450 VO = 10 V 8 15 rDS(on) Drain-source on-state resistance (Q2) IDS = 500 mA Ω VO = 5 V 12 22 IDS Drain-source current rating (Q2) 1 A Current limit (SW) 2 2.5 3.4 A Copyright © 2005–2016, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: TPS65150 |
Similar Part No. - TPS65150RGER |
|
Similar Description - TPS65150RGER |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |