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TPS65150RGERG4 Datasheet(PDF) 4 Page - Texas Instruments |
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TPS65150RGERG4 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 47 page TPS65150 SLVS576B – SEPTEMBER 2005 – REVISED JANUARY 2016 www.ti.com Pin Functions (continued) PIN I/O DESCRIPTION NAME VQFN HTSSOP Input of the VCOM buffer. If this pin is connected to ground, the VCOM buffer is IN 14 11 I disabled. PGND 10, 11 7, 8 Power ground. REF 23 20 O Internal reference output, typically 1.213 V. Supply pin of the positive, negative charge pump and boost converter gate drive SUP 12 9 I/O circuit. This pin should be connected to the output of the main boost converter. SW 8, 9 5, 6 I Switch pin of the boost converter. VCOM 13 10 O VCOM buffer output. Typically a 1-µF output capacitor is required on this pin. Positive output voltage to drive the TFT gates with an adjustable fall time. This VGH 18 15 O pin is internally connected with a MOSFET switch to the positive charge pump input CPI. VIN 7 4 I This is the input voltage pin of the device. Thermal Pad — — The thermal pad must to be soldered to GND 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Voltages on pin VIN(2) –0.3 7 V Voltages on pin SUP –0.3 15.5 V Voltage on pin SW 20 V Voltage on CTRL –0.3 7 V Voltage on GD 15.5 V Voltage on CPI 32 V Continuous power dissipation See Thermal Information — Lead temperature (soldering, 10 s) 260 °C Operating junction temperature –40 150 °C Storage temperature –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltage values are with respect to network ground terminal. 6.2 ESD Ratings VALUE UNIT Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V(ESD) Electrostatic discharge V Charged-device model (CDM), per JEDEC specification JESD22- ±500 C101(2) (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 4 Submit Documentation Feedback Copyright © 2005–2016, Texas Instruments Incorporated Product Folder Links: TPS65150 |
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