RoHS Device

General Purpose Transistors

QW-BTR27

Page 1

REV:B

Features

- Ldeally suited for automatic insertion.

- Epitaxial planar die construction.

- Complementary NPN type available (BC817).

Diagram:

Dimensions in inches and (millimeter)

Parameter

Value

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current-continuous

Collector power dissipation

Junction temperature range

SOT-23

3

1

2

0.119(3.00)

0.110(2.80)

0.056(1.40)

0.047(1.20)

0.083(2.10)

0.066(1.70)

0.044(1.10)

0.035(0.90)

0.020(0.50)

0.013(0.35)

0.006(0.15)

0.002(0.05)

0.103(2.60)

0.086(2.20)

0.006(0.15) max

0.007(0.20) min

Symbol

Parameter

Conditions

Min

Max

Unit

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-Emitter saturation voltage

Base-Emitter saturation voltage

Transition frequency

-50

-45

-5

100

40

100

-0.1

-0.2

-0.1

600

-0.7

-1.2

V

V

V

μA

μA

μA

V

V

MHz

1

Base

2

Emitter

Collector

3

-50

-45

-5

-500

300

150

V

V

V

mA

mW

°C

Symbol

Thermal resistance form

417

°C/W

Storage temperature range

-55 to +150

°C

junction to ambient

Range

Marking

250-600

5C

100-250

5A

BC807-40-G

Rank

BC807-16-G

BC807-25-G

160-400

5B

Company reserves the right to improve product design , functions and reliability without notice.

Comchip Technology CO., LTD.

Mechanical data

- Case: SOT-23 Standard package, molded

plastic.

- Mounting position: Any.

- Weight: 0.008 grams(approx.).

- Terminals: Tin plated, solderable per

MIL-STD-750, method 2026