Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

TGA2590 Datasheet(PDF) 11 Page - TriQuint Semiconductor

Part # TGA2590
Description  6-12 GHz 30W GaN Power Amplifier
Download  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

TGA2590 Datasheet(HTML) 11 Page - TriQuint Semiconductor

Back Button TGA2590 Datasheet HTML 4Page - TriQuint Semiconductor TGA2590 Datasheet HTML 5Page - TriQuint Semiconductor TGA2590 Datasheet HTML 6Page - TriQuint Semiconductor TGA2590 Datasheet HTML 7Page - TriQuint Semiconductor TGA2590 Datasheet HTML 8Page - TriQuint Semiconductor TGA2590 Datasheet HTML 9Page - TriQuint Semiconductor TGA2590 Datasheet HTML 10Page - TriQuint Semiconductor TGA2590 Datasheet HTML 11Page - TriQuint Semiconductor TGA2590 Datasheet HTML 12Page - TriQuint Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 11 / 12 page
background image
TGA2590
6-12 GHz 30W GaN Power Amplifier
Datasheet: Rev - 05-08-14
- 11 of 12 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
The information contained on this data sheet is technical information as defined by 22 CFR 120.10 and is therefore
US export controlled. Export or transfer contrary to US law is prohibited.
Assembly Notes
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment (i.e. epoxy) can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Reflow process assembly notes:
Use AuSn (80/20) solder and limit exposure to temperatures above 300
C to 3-4 minutes, maximum.
An alloy station or conveyor furnace with reducing atmosphere should be used.
Do not use any kind of flux.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Devices with small pad sizes should be bonded with 0.0007-inch wire.
The information contained on this data sheet is technical information as defined by 22 CFR 120.10 and is therefore
US export controlled. Export or transfer contrary to US law is prohibited.


Similar Part No. - TGA2590

ManufacturerPart #DatasheetDescription
logo
Qorvo, Inc
TGA2590 QORVO-TGA2590 Datasheet
797Kb / 12P
   6-12 GHz 30W GaN Power Amplifier
logo
TriQuint Semiconductor
TGA2590-CP TRIQUINT-TGA2590-CP Datasheet
579Kb / 11P
   6 to 12GHz, 30W GaN Power Amplifier
logo
Qorvo, Inc
TGA2590-CP QORVO-TGA2590-CP Datasheet
457Kb / 11P
   6 ??12 GHz 30 W GaN Power Amplifier
More results

Similar Description - TGA2590

ManufacturerPart #DatasheetDescription
logo
Qorvo, Inc
TGA2590 QORVO-TGA2590 Datasheet
797Kb / 12P
   6-12 GHz 30W GaN Power Amplifier
logo
TriQuint Semiconductor
TGA2578-CP TRIQUINT-TGA2578-CP_15 Datasheet
601Kb / 12P
   2 to 6 GHz, 30W GaN Power Amplifier
logo
Qorvo, Inc
TGA2590-CP QORVO-TGA2590-CP Datasheet
457Kb / 11P
   6 ??12 GHz 30 W GaN Power Amplifier
logo
TriQuint Semiconductor
TGA2590-CP TRIQUINT-TGA2590-CP Datasheet
579Kb / 11P
   6 to 12GHz, 30W GaN Power Amplifier
TGA2627-SM TRIQUINT-TGA2627-SM_15 Datasheet
1Mb / 16P
   6 to 12 GHz GaN Driver Amplifier
logo
Qorvo, Inc
TGA2598 QORVO-TGA2598 Datasheet
457Kb / 13P
   6 ??12 GHz 2W GaN Driver Amplifier
December 2020
logo
TriQuint Semiconductor
T1G6003028-FS TRIQUINT-T1G6003028-FS Datasheet
1Mb / 13P
   30W, 28V, DC ??6 GHz, GaN RF Power Transistor
T1G6003028-FL TRIQUINT-T1G6003028-FL_15 Datasheet
1Mb / 13P
   30W, 28V, DC 6 GHz, GaN RF Power Transistor
T2G6003028-FS TRIQUINT-T2G6003028-FS_15 Datasheet
778Kb / 13P
   30W, 28V DC 6 GHz, GaN RF Power Transistor
logo
Qorvo, Inc
T2G6003028-FS QORVO-T2G6003028-FS Datasheet
2Mb / 21P
   30W, 28V DC ??6 GHz, GaN RF Power Transistor
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com