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TGA2590 Datasheet(PDF) 11 Page - TriQuint Semiconductor |
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TGA2590 Datasheet(HTML) 11 Page - TriQuint Semiconductor |
11 / 12 page TGA2590 6-12 GHz 30W GaN Power Amplifier Datasheet: Rev - 05-08-14 - 11 of 12 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com The information contained on this data sheet is technical information as defined by 22 CFR 120.10 and is therefore US export controlled. Export or transfer contrary to US law is prohibited. Assembly Notes Component placement and adhesive attachment assembly notes: • Vacuum pencils and/or vacuum collets are the preferred method of pick up. • Air bridges must be avoided during placement. • The force impact is critical during auto placement. • Organic attachment (i.e. epoxy) can be used in low-power applications. • Curing should be done in a convection oven; proper exhaust is a safety concern. Reflow process assembly notes: • Use AuSn (80/20) solder and limit exposure to temperatures above 300 C to 3-4 minutes, maximum. • An alloy station or conveyor furnace with reducing atmosphere should be used. • Do not use any kind of flux. • Coefficient of thermal expansion matching is critical for long-term reliability. • Devices must be stored in a dry nitrogen atmosphere. Interconnect process assembly notes: • Thermosonic ball bonding is the preferred interconnect technique. • Force, time, and ultrasonics are critical parameters. • Aluminum wire should not be used. • Devices with small pad sizes should be bonded with 0.0007-inch wire. The information contained on this data sheet is technical information as defined by 22 CFR 120.10 and is therefore US export controlled. Export or transfer contrary to US law is prohibited. |
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Similar Description - TGA2590 |
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