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TLP763J Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TLP763J Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page ![]() TLP763J 2014-09-22 2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 50 mA Forward current derating (Ta ≥ 53°C) ∆IF/°C −0.7 mA/°C Peak forward current (100 μs pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C Off −state output terminal voltage VDRM 600 V On −state RMS current Ta = 25°C IT(RMS) 100 mA Ta = 70°C 50 On −state current derating (Ta ≥ 25°C) ∆IT/°C −1.1 mA/°C Peak on −state current (100μs pulse, 120pps) ITP 2 A Peak non-repetitive surge current (PW = 10 ms) ITSM 1.2 A Junction temperature Tj 115 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 100 °C Lead soldering temperature (10s) Tsol 260 °C Isolation voltage (AC, 1 minute, R.H.≤ 60%) BVS 4000 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage VAC ― ― 240 Vac Forward current IF 15 20 25 mA Peak on −state current ITP ― ― 1 A Operating temperature Topr −25 ― 85 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. |
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