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VIN

Q1

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LM74670

GATE DRIVE

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LM74670-Q1

SNOSD08A – SEPTEMBER 2015 – REVISED OCTOBER 2015

1 Features

3 Description

The LM74670-Q1 is a controller device that can be

1

•

AEC-Q100 Qualified With the Following Results:

used with an N-Channel MOSFET in full or half

–

Device Temperature Grade 1: –40°C to

bridge rectifier architectures for alternators. It is

+125°C Ambient Operating Temperature

designed to drive an external MOSFET to emulate an

Range

ideal diode. A unique advantage of this scheme is

–

Exceeds HBM ESD Classification Level 2

The schottky diodes in full or half bridge rectifiers and

–

Device CDM ESD Classification Level C4B

alternators can be replaced with the LM74670-Q1

•

Peak Input AC Voltage: 42 V

solution to avoid forward conduction diode losses and

•

produce more efficient AC-DC converters.

•

Charge Pump Gate Driver for external N-Channel

The LM74670-Q1 controller provides a gate drive for

MOSFET

external N-Channel MOSFET and a fast response

internal comparator to pull-down the MOSFET Gate

•

Low Forward-Voltage Drop and Less Power

in the event of reverse polarity. This device can

Dissipation Compared to Schottky Diode

support an AC signal frequency up to 300Hz.

•

Capable of handling AC signal up to 300-Hz

Frequency

Device Information(1)

PART NUMBER

PACKAGE

BODY SIZE (NOM)

2 Applications

LM74670-Q1

VSSOP (8)

3.00 mm × 5.00 mm

•

AC Rectifier

(1) For all available packages, see the orderable addendum at

•

Alternator

the end of the data sheet.

•

Power Tools

•

Reverse Polarity Protection

Smart Diode Full Bridge Rectifier Application

Smart Diode Configuration

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.