GaN Wideband Transistor Die

28 V, 45 W, DC - 3.5 GHz

Rev. V1

MATR-GSHC03-160150

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5

Frequency

(MHz)

(

)

(

)

(W)

(dB)

Drain Efficiency

900

1.1 + j0.7

6.3 + j1.8

53.7

22.5

65.1

2200

1.6 - j6.0

5.4 - j0.6

53.2

15.8

64.8

2500

1.5 - j6.7

5.2 - j2.2

50.9

15.0

60.8

3500

2.6 - j15

3.9 - j6.3

42.0

13.9

55.4

Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance

Gain vs. Output Power

Drain Efficiency vs. Output Power

Impedance Reference

10

12

14

16

18

20

22

24

25

30

35

40

45

50

900MHz

2200MHz

2500MHz

3500MHz

P

0

10

20

30

40

50

60

70

25

30

35

40

45

50

900MHz

2200MHz

2500MHz

3500MHz

P

10. Typical RF loadpull performance of packaged die. Refer to MACOM product NPT1015 for details.