IS29GL256H-70DLA datasheet(2/70 Pages) ISSI

Part #	IS29GL256H-70DLA

Description	16-word/32-byte page read buffer

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

Direct Link	http://www.issi.com

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Integrated Silicon Solution, Inc. - www.issi.com

Rev. 00A

08/08/2014

2

IS29GL256H/L

FEATURES

 Single power supply operation

- Full voltage range: 2.7 to 3.6 volts read and

write operations

 High performance

- Access times as fast as 70ns

 V

IO Input/Output 1.65 to 3.6 volts

- All input levels (address, control, and DQ input

levels) and outputs are determined by voltage

on VIO input. VIO range is 1.65 to VCC

 16-word/32-byte page read buffer

 256-word/512-byte write buffer reduces overall

programming time for multiple-word updates

 Secured Silicon Sector (SSR) region

- 512-word/1024-byte sector for permanent,

secure identification

- 256-word Factory Locked SSR and 256-word

Customer Locked SSR

 Uniform 64Kword/128KByte Sector

Architecture 256 sectors

 Suspend and Resume commands for Program

and Erase operations

 Write operation status bits indicate program

and erase operation completion

 Support for CFI (Common Flash Interface)

 Persistent methods of Advanced Sector

Protection

 WP#/ACC input

- Accelerates programming time (when VHH is

applied) for greater throughput during system

production

- Protects first or last sector regardless of sector

protection settings

 Hardware reset input (RESET#) resets device

 Ready/Busy# output (RY/BY#) detects

program or erase cycle completion

 Minimum 100K program/erase endurance

cycles.

 Package Options

- 56-pin TSOP

- 64-ball 11mm x 13mm BGA

- 64-ball 9mm x 9mm BGA

- 56-ball 7mm x 9mm BGA

 Temperature Range

- Extended Grade: -40°C to +105°C

- V Grade (Hybrid): -40°C to +125°C

- Automotive Grade: up to +125°C

GENERAL DESCRIPTION

The IS29GL256 offers a fast page access time of 25ns with a corresponding random access time as

fast as 70ns. It features a Write Buffer that allows a maximum of 256 words/512 bytes to be

programmed in one operation, resulting in faster effective programming time than standard

programming algorithms. This makes the

device ideal for today’s embedded applications that require

higher density, better performance and lower power consumption.

IS29GL256

256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory

Page mode Flash Memory, CMOS 3.0 Volt-only

ADVANCED INFORMATION

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IS29GL256H-70DLA Datasheet(PDF) 2 Page - Integrated Silicon Solution, Inc

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